G3R160MT12D
Производится
Краткое описание:
1200V 160mΩ SiC MOSFET N-Channel Enhancement Mode
Дополнительная информация
G3R160MT12D is a Silicon Carbide (SiC) MOSFET featuring G3R technology designed for 1200V applications. It provides low conduction losses across all temperatures with a soft RDS(on) vs temperature dependency. The device is electromagnetically optimized for low ringing (LoRing design), features high frequency switching capability, and includes a robust body diode with low reverse recovery charge. It is 100% avalanche (UIL) tested and compatible with commercial gate drivers.
| RoHS | Compliant |
| REACH | Compliant |
| Operating Temperature | -55 to 175°C |
| Drain-Source Voltage (Vds) | 1200V |
| Total Gate Charge (Qg Typ.) | 21nC |
| Input Capacitance (Ciss Typ.) | 596pF |
| Power Dissipation (Pd) @ 25°C | 106W |
| Gate Threshold Voltage (Vgs(th) Typ.) | 2.7V |
| Continuous Drain Current (Id) @ 100°C | 13A |
| Drain-Source On-State Resistance (RDS(ON) Typ.) | 160mΩ |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.