G3R160MT17D
Производится
Краткое описание:
1700V 160mΩ SiC MOSFET N-Channel Enhancement Mode
Дополнительная информация
The G3R160MT17D is a high-performance 1700V Silicon Carbide (SiC) MOSFET featuring G3R technology. It is designed for high-voltage applications requiring low switching losses and high efficiency. It features a low gate charge, low device capacitances, and a robust design with +15V gate drive compatibility. This device is optimized for power conversion systems in renewable energy, industrial drives, and high-voltage power supplies.
| RoHS | Compliant |
| REACH | Compliant |
| Operating Temperature | -55 to 175°C |
| Total Gate Charge (Qg) | 31nC |
| Gate-Source Voltage (Vgs) | -5/+20V |
| Drain-Source Voltage (Vdss) | 1700V |
| Continuous Drain Current (Id) | 14A |
| Drain-Source On-Resistance (RDS(on)) | 160mΩ |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.