G3R20MT12N
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Краткое описание:
1200V 20mΩ SiC MOSFET N-Channel Enhancement Mode
Дополнительная информация
The G3R20MT12N is a 3rd Generation (G3R) Silicon Carbide MOSFET featuring low temperature coefficient of RDS(ON), low device capacitances, and a robust body diode. It is designed for high-efficiency power conversion applications including solar inverters, electric vehicle charging, and high-voltage DC-DC converters. It utilizes an electromagnetically optimized LoRing design for reduced switching spikes and losses.
| ECCN | EAR99 |
| RoHS | Compliant |
| Weight | 28g |
| RDS(ON) Max | 20mΩ |
| Package Width | 25.1mm |
| Package Height | 11.9mm |
| Package Length | 31.5mm |
| Drain-Source Voltage | 1200V |
| Continuous Drain Current | 64A |