G3R20MT17K
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Краткое описание:
Silicon Carbide MOSFET N-CH 1700V 100A 20mΩ TO-247-4
Дополнительная информация
High-performance G3R™ technology Silicon Carbide MOSFET featuring a +15 V gate drive and low internal gate resistance. It is designed for low device capacitances and optimized electromagnetic performance through LoRing™ design to minimize oscillation. The device offers robust performance with a softer RDS(ON) temperature dependency compared to previous generations.
| RoHS | Compliant |
| REACH | Compliant |
| Halogen Free | Yes |
| Total Gate Charge (Qg) | 245nC |
| Input Capacitance (Ciss) | 9150pF |
| Power Dissipation (Ptot) | 543W |
| Gate-Source Voltage (Vgs) | +15 / -5V |
| Operating Temperature (Tj) | -55 to 175°C |
| Drain to Source Voltage (Vdss) | 1700V |
| Drain-Source On-Resistance (RDS(on)) | 20mΩ |
| Continuous Drain Current (Id) @ 25°C | 100A |
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