G3R30MT12K
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Краткое описание:
1200V 30mΩ SiC MOSFET N-Channel Enhancement Mode
Дополнительная информация
The G3R30MT12K is a 3rd Generation (G3R) Silicon Carbide MOSFET designed for high-efficiency power conversion. It features an electromagnetically optimized Toh-247-4 package with a Kelvin Source pin to reduce switching losses and ringing. The device offers low conduction losses across all temperatures, a robust body diode with low reverse recovery charge, and is 100% avalanche (UIL) tested.
| RoHS | Compliant |
| REACH | Compliant |
| Drain-Source Voltage | 1200V |
| Power Dissipation (Pd) | 281W |
| Total Gate Charge (Qg) | 122nC |
| Operating Temperature (Tj) | -55 to 175°C |
| On-Resistance (RDS(on)) @ 15V | 30mΩ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Continuous Drain Current (Tc=25°C) | 70A |
| Continuous Drain Current (Tc=100°C) | 50A |
| Non-Repetitive Avalanche Energy (Eas) | 498mJ |
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