G3R350MT12D
Производится
Краткое описание:
1200V 11A 350mΩ SiC MOSFET N-Channel Enhancement Mode
Дополнительная информация
The G3R350MT12D is a high-performance Silicon Carbide (SiC) MOSFET optimized for low-loss and high-speed switching operations. It features a high breakdown voltage of 1200 V and a typical on-resistance of 350 mΩ, making it suitable for high-efficiency power distribution systems and automotive applications. The device includes an integrated temperature sensor and is housed in a TO-247-3 package.
| RoHS | Compliant |
| Halogen Free | Yes |
| Power Dissipation (Pd) | 63W |
| Total Gate Charge (Qg) | 10nC |
| Operating Temperature Range | -55 to 175°C |
| Drain Source Breakdown Voltage | 1200V |
| Drain Source On-Resistance (RDS(on)) | 350mΩ |
| Continuous Drain Current (Id) @ 25°C | 11A |
| Gate Source Threshold Voltage (Vgs(th)) | 1.8 to 2.7V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.