G3R40MT12J
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Краткое описание:
1200 V 40 mΩ SiC MOSFET, N-Channel Enhancement Mode
Дополнительная информация
The G3R40MT12J is an N-Channel Enhancement Mode Silicon Carbide (SiC) MOSFET featuring G3R technology. It is designed for low conduction losses across all temperatures, faster switching with electromagnetically optimized design (LoRing), and robustness in body diode performance. It is 100% avalanche (UIL) tested and optimized for high-power applications requiring high efficiency and power density.
| RoHS | Compliant |
| REACH | Compliant |
| Total Gate Charge (Qg) | 114nC |
| Drain-Source Voltage (Vds) | 1200V |
| Operating Temperature Range | -55 to 175°C |
| Power Dissipation (Pd) @ 25°C | 330W |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Drain-Source On Resistance (Rds(on)) | 40mΩ |
| Continuous Drain Current (Id) @ 25°C | 66A |
| Gate-Source Voltage (Vgs) Recommended | -5 / +15V |
| Non-Repetitive Avalanche Energy (Eas) | 374mJ |
| Continuous Drain Current (Id) @ 100°C | 47A |
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