G3R75MT12J
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Краткое описание:
1200V 75mΩ SiC MOSFET, N-Channel Enhancement Mode
Дополнительная информация
G3R75MT12J is a high-performance 1200V Silicon Carbide (SiC) MOSFET featuring G3R technology. It offers low conduction losses across all temperatures, faster switching speeds, and lower switching spikes. The device is housed in a TO-263-7 package and is optimized for low-voltage, high-speed operations in demanding industrial environments.
| RoHS | Compliant |
| REACH | Compliant |
| Operating Temperature | -55 to 175°C |
| Total Gate Charge (Qg) | 54nC |
| Power Dissipation (Max) | 224W |
| Input Capacitance (Ciss) | 1560pF |
| Drain to Source Voltage (Vdss) | 1200V |
| Drain-source On Resistance (Typ) | 75mOhm |
| Gate Threshold Voltage (Vgs(th)) | 2.69V |
| Continuous Drain Current (Id) @ 25°C | 42A |
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