GD10MPS17H
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Краткое описание:
1.7kV Silicon Carbide (SiC) Schottky MPS Diode, 10A, TO-247-2
Дополнительная информация
The GD10MPS17H is a 1700V Silicon Carbide (SiC) Merged PiN Schottky (MPS) diode designed for high-efficiency power conversion. It features a zero reverse recovery current, zero forward recovery voltage, and a temperature-independent switching behavior. This device is optimized for high-frequency switching, high-voltage power supplies, and harsh environmental conditions, providing enhanced thermal performance and lower power losses compared to standard silicon diodes.
| ECCN | EAR99 |
| RoHS | Compliant |
| Power Dissipation | 167W |
| Forward Voltage Drop | 1.8V |
| Operating Temperature | -55 to 175C |
| Total Capacitive Charge | 51nC |
| Continuous Forward Current | 10A |
| Repetitive Peak Reverse Voltage | 1700V |
| Surge Forward Current (tp=8.3ms) | 80A |
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