GD2X100MPS06N
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Краткое описание:
650V 200A Silicon Carbide Schottky MPS Diode
Дополнительная информация
A dual-isolated Silicon Carbide (SiC) Schottky Merged PiN Schottky (MPS) diode featuring Gen4 thin chip technology for low forward voltage. It offers temperature-independent fast switching, enhanced surge current robustness, and a positive temperature coefficient for easier paralleling. The device is designed for high-efficiency power applications including PFC boost diodes, SMPS, and solar inverters.
| RoHS | Compliant |
| REACH | Compliant |
| Isolation Voltage | 2500V |
| Max Operating Temperature | 175°C |
| Diode Forward Voltage (Typ) | 1.5V |
| Total Capacitive Charge (Typ) | 122nC |
| Repetitive Peak Reverse Voltage | 650V |
| Continuous Forward Current (Per Device) | 200A |
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