GD2X75MPS17N
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Краткое описание:
Silicon Carbide (SiC) Schottky Diode, 1700V, 150A (Combined), SOT-227
Дополнительная информация
The GD2X75MPS17N is a high-performance Silicon Carbide (SiC) Schottky diode featuring Gen4 Thin Chip Technology. It consists of two independent 75A elements (150A total DC) in a SOT-227 package. It offers low forward voltage, enhanced surge and avalanche robustness, superior Figure of Merit (QC/IF), and temperature-independent fast switching with a positive temperature coefficient.
| Msl | 1 Unlimited |
| RoHS | Compliant |
| REACH | Unaffected |
| Diode Configuration | 2 Independent |
| Total Forward Current (IF) | 150A |
| Operating Temperature Range | -55 to 175°C |
| Forward Current (IF) per leg | 75A |
| Forward Voltage (VF) typical | 1.8V |
| Max Forward Surge Current (IFSM) | 750A |
| Total Capacitive Charge (QC) per leg | 524nC |
| Repetitive Peak Reverse Voltage (VRRM) | 1700V |
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