GP1S560J000F
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Краткое описание:
Phototransistor 35V 20mA Through Hole
Дополнительная информация
The GP1S560J000F phototransistor from Sharp features a collector-emitter breakdown voltage of 35V and a maximum collector current of 20mA. It has a response time of 48us and a power dissipation of 75mW. The device is available in a through-hole package and is rated for operation between -25°C and 85°C. The phototransistor is lead-free and has a reverse breakdown voltage of 6V.
| RoHS | Compliant |
| Mount | Through Hole |
| Fall Time | 100us |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Response Time | 48us |
| Output Current | 20mA |
| Forward Current | 50mA |
| Package Quantity | 2000 |
| Power Dissipation | 75mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Output Configuration | Phototransistor |
| Max Collector Current | 20mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Reverse Breakdown Voltage | 6V |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector Emitter Breakdown Voltage | 35V |
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