GP1S56TJ000F

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GP1S56TJ000F - Sharp
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Краткое описание: Phototransistor Photointerrupter Slotted 35V 20mA 75mW Through Hole
Производитель Sharp
Статус производства Производится (ACTIVE)

Дополнительная информация

This phototransistor photointerrupter from Sharp features a collector-emitter breakdown voltage of 35V and a maximum collector current of 20mA. It has a power dissipation of 75mW and is designed for through-hole mounting. The device operates within a temperature range of -25°C to 85°C and is compliant with RoHS regulations.
RoHS Compliant
Mount Through Hole
Fall Time 110000ns
Lead Free Lead Free
Packaging Rail/Tube
Response Time 48us
Output Current 20mA
RoHS Compliant Yes
Contact Plating Copper, Tin, Silver
Forward Current 50mA
Package Quantity 100
Power Dissipation 75mW
Number of Elements 1
Radiation Hardening No
Output Configuration Phototransistor
Max Collector Current 20mA
Max Operating Temperature 85°C
Min Operating Temperature -25°C
Reverse Breakdown Voltage 6V
Collector-emitter Voltage-Max 35V
Collector Emitter Voltage (VCEO) 35V
Collector Emitter Breakdown Voltage 35V