H21A6

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H21A6 - Onsemi
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Краткое описание: Phototransistor 55V 50mA Through Hole
Производитель Onsemi
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The H21A6 phototransistor is a phototransistor with a collector-emitter breakdown voltage of 55V and a maximum collector current of 20mA. It operates within a temperature range of -55°C to 100°C and has a response time of 50us. The device is packaged in a rail/Tube package and is RoHS compliant. The phototransistor is designed for through hole mounting with flanges and screw terminals. It has a maximum power dissipation of 150mW and an operating supply voltage of 1.7V.
RoHS Compliant
Mount Through Hole, Flanges, Screw
Packaging Rail/Tube
Input Current 60mA
Response Time 50us
Output Voltage 55V
RoHS Compliant Yes
Forward Current 50mA
DC Rated Voltage 55V
Package Quantity 50
Power Dissipation 150mW
Number of Elements 1
Output Configuration Phototransistor
Max Collector Current 20mA
Operating Supply Voltage 1.7V
Max Operating Temperature 100°C
Min Operating Temperature -55°C
Reverse Breakdown Voltage 6V
Collector-emitter Voltage-Max 55V
Collector Emitter Voltage (VCEO) 55V
Collector Emitter Breakdown Voltage 55V

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