HAT2166H-EL-E
Не рекомендуется для новых проектов
Увеличить
Краткое описание:
N-CH MOSFET 30V 45A 6.1mR LFPAK Switching
Дополнительная информация
N-channel single power MOSFET designed for switching applications. Features a 30V drain-source breakdown voltage and a maximum continuous drain current of 45A, with a pulsed drain current capability of 180A. Offers a low drain-source on-resistance of 6.1mΩ. Housed in a rectangular, small outline LFPAK package with gull-wing terminals for surface mounting. Operates up to 150°C and is RoHS compliant.
| RoHS | Compliant |
| JESD-609 Code | e6 |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Compliant | Yes |
| Case Connection | DRAIN |
| Terminal Finish | Tin |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Qualification Status | Not Qualified |
| Package Body Material | Plastic |
| Polarity/Channel Type | N-CHANNEL |
| Drain Current-Max (ID) | 45A |
| Transistor Application | SWITCHING |
| DS Breakdown Voltage-Min | 30V |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Power Dissipation-Max (Abs) | 25W |
| Transistor Element Material | SILICON |
| Drain Current-Max (Abs) (ID) | 45A |
| Peak Reflow Temperature (Cel) | 260°C |
| Drain-source On Resistance-Max | 6.1mR |
| Pulsed Drain Current-Max (IDM) | 180A |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
