HAT2168H-EL-E
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Краткое описание:
N-CH MOSFET 30V 30A 7.9mR LFPAK Switching
Дополнительная информация
N-channel single power MOSFET featuring 30V drain-source breakdown voltage and a maximum continuous drain current of 30A. This component offers a low on-resistance of 7.9mΩ (typical) and a maximum of 13.5mΩ. Designed for switching applications, it supports a pulsed drain current up to 120A and has a maximum power dissipation of 15W. The MOSFET utilizes silicon for its element material and is housed in a rectangular, small outline LFPAK package with gull-wing terminals for surface mounting. It operates up to 150°C and is RoHS compliant.
| RoHS | Compliant |
| JESD-609 Code | e6 |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Compliant | Yes |
| Case Connection | DRAIN |
| Terminal Finish | Tin |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Qualification Status | Not Qualified |
| Package Body Material | Plastic |
| Polarity/Channel Type | N-CHANNEL |
| Drain Current-Max (ID) | 30A |
| Transistor Application | SWITCHING |
| DS Breakdown Voltage-Min | 30V |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Power Dissipation-Max (Abs) | 15W |
| Transistor Element Material | SILICON |
| Drain Current-Max (Abs) (ID) | 30A |
| Peak Reflow Temperature (Cel) | 260°C |
| Drain-source On Resistance-Max | 13.5mR |
| Pulsed Drain Current-Max (IDM) | 120A |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
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