HFA3046BZ
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Краткое описание:
NPN BJT Transistor 8V 65mA 8GHz SOIC N 5-Element
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage (VCEO) of 8V and a continuous collector current of 65mA. Operates at frequencies up to 8GHz with a maximum power dissipation of 150mW. Packaged in a 14-pin SOIC N surface-mount case, this component offers a wide operating temperature range from -55°C to 125°C and is RoHS compliant. Includes five transistor elements within a single package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 8.75mm |
| Polarity | NPN |
| Frequency | 8GHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | SOIC N |
| Max Frequency | 8GHz |
| Current Rating | 65mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 8V |
| Power Dissipation | 150mW |
| Number of Elements | 5 |
| Radiation Hardening | No |
| Max Collector Current | 65mA |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5.5V |
| Collector Base Voltage (VCBO) | 12V |
| Collector Emitter Voltage (VCEO) | 8V |
| Collector Emitter Saturation Voltage | 500mV |
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