HFA3096BZ
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NPN/PNP Transistor Array, 8GHz, 65mA, 12V, SOIC
Дополнительная информация
This transistor array features NPN and PNP polarity, offering a Collector Emitter Voltage (VCEO) of 8V and a Collector Base Voltage (VCBO) of 12V. With a maximum collector current of 65mA and a transition frequency of 8GHz, this component is designed for surface mount applications in a SOIC package. It operates within a temperature range of -55°C to 125°C and boasts a maximum power dissipation of 150mW. The device is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 10mm |
| Polarity | NPN, PNP |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | SOIC |
| Current Rating | 65mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 8V |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 8GHz |
| Max Collector Current | 65mA |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5.5V |
| Collector Base Voltage (VCBO) | 12V |
| Collector Emitter Voltage (VCEO) | 8V |
| Collector Emitter Breakdown Voltage | 8V |
| Collector Emitter Saturation Voltage | 500mV |
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