HFA3127BZ
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Краткое описание:
NPN BJT Transistor 8V 65mA 8GHz SOIC Surface Mount
Дополнительная информация
NPN bipolar junction transistor in a 16-pin SOIC package, designed for surface mounting. Features a maximum collector current of 65mA and a collector-emitter breakdown voltage of 8V. Offers a transition frequency of 8GHz and a maximum power dissipation of 150mW. Operates across a temperature range of -55°C to 125°C, with a collector-emitter saturation voltage of 500mV.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 10mm |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | SOIC |
| Max Frequency | 8GHz |
| Current Rating | 65mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 8V |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 8GHz |
| Max Collector Current | 65mA |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5.5V |
| Collector Base Voltage (VCBO) | 12V |
| Collector Emitter Voltage (VCEO) | 8V |
| Collector Emitter Breakdown Voltage | 8V |
| Collector Emitter Saturation Voltage | 500mV |
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