HGTG18N120BND

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HGTG18N120BND - Onsemi
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Краткое описание: 1200V 54A IGBT Transistor, TO-247, 390W
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Insulated Gate Bipolar Transistor (IGBT) featuring a 1.2kV Collector-Emitter Breakdown Voltage and 54A Max Collector Current. This NPT IGBT offers a 2.45V Collector-Emitter Saturation Voltage and 390W Max Power Dissipation. Designed for through-hole mounting in a TO-247 package, it operates from -55°C to 150°C and boasts a 75ns reverse recovery time. This RoHS compliant component is supplied in a rail/tube package.
RoHS Compliant
Mount Through Hole
Width 4.82mm
Height 20.82mm
Length 15.87mm
Weight 6.39g
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-247
Current Rating 54A
RoHS Compliant Yes
DC Rated Voltage 1.2kV
Package Quantity 150
Power Dissipation 390W
Turn-On Delay Time 23us
Radiation Hardening No
Turn-Off Delay Time 170us
Reach SVHC Compliant No
Max Collector Current 54A
Max Power Dissipation 390W
Reverse Recovery Time 75ns
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Collector-emitter Voltage-Max 2.7V
Collector Emitter Voltage (VCEO) 1.2kV
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.45V

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