HGTP3N60A4
Производится
Увеличить
Краткое описание:
600V IGBT, 17A, 70W, TO-220AB, Through Hole
Дополнительная информация
600V Insulated Gate Bipolar Transistor (IGBT) for Switched-Mode Power Supplies (SMPS). Features a 600V Collector Emitter Breakdown Voltage and a 17A continuous current rating. Offers a low 2.05V Collector Emitter Saturation Voltage and 70W maximum power dissipation. Packaged in a TO-220AB through-hole mount, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.57mm |
| Height | 9.02mm |
| Length | 10.28mm |
| Series | HGTP3N60 |
| Weight | 1.8g |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Input Type | STANDARD |
| Package/Case | TO-220AB |
| Current Rating | 17A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 400 |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Max Collector Current | 17A |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Collector-emitter Voltage-Max | 2.7V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.05V |
