HLC1395-002
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Краткое описание:
IR Phototransistor, 1-Ch, 30V, 10mA, SIP, Through Hole
Дополнительная информация
Rectangular diffuse photoelectric sensor with a single channel and through-hole mounting. Features a polysulfone plastic package with SIP termination. Operates with a 30V collector-emitter breakdown voltage and a 30mA maximum collector current. Offers a 1.02mm sensing distance and a 15µs response time. Power dissipation is 100mW, with an operating temperature range of -40°C to 85°C.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Width | 2.21mm |
| Height | 5.72mm |
| Length | 4.45mm |
| Output | TRANSISTOR |
| Material | Polysulfone |
| Fall Time | 15000ns |
| Packaging | Bulk |
| Output Type | Phototransistor |
| Termination | LEAD |
| Touchscreen | Infrared (IR) |
| Package/Case | SIP |
| Input Current | 10mA |
| Response Time | 15us |
| Output Current | 1mA |
| RoHS Compliant | No |
| Supply Current | 10mA |
| Forward Current | 50mA |
| DC Rated Voltage | 30V |
| Sensing Distance | 1.02mm |
| Max Input Current | 50mA |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Voltage (DC) | 3V |
| Max Collector Current | 30mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 3V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
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