HN1A01F-Y(5LCA-O,F

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HN1A01F-Y(5LCA-O,F - Toshiba
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Краткое описание: PNP BJT Dual 50V 0.15A SOT-363 Surface Mount Transistor
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 50V collector-emitter voltage and 0.15A continuous collector current. Packaged in a compact 6-pin US (SOT-363) surface-mount case with dimensions of 2mm x 1.25mm x 0.9mm. Operates across a temperature range of -55°C to 125°C, with a minimum DC current gain of 120.
PCB 6
ECCN EAR99
PPAP No
Type PNP
Jedec SOT-363
EU RoHS Yes
Category Bipolar Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 6
Automotive No
Schedule B 8541210080
Package/Case US
AEC Qualified No
Configuration Dual
RoHS Versions 2002/95/EC
Package Weight (g) 0.0068
Package Width (mm) 1.25
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Minimum DC Current Gain 120@2mA@6V
Seated Plane Height (mm) 1.1(Max)
Max Operating Temperature 125°C
Maximum Power Dissipation 300mW
Min Operating Temperature -55°C
Number of Elements per Chip 2
Maximum DC Collector Current 0.15A
Maximum Emitter Base Voltage 5V
Maximum Transition Frequency 80(Min)MHz
Maximum Collector Base Voltage 50V
Maximum Collector-Emitter Voltage 50V

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