HN1A01FU(T5RSN,F,T
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Dual PNP BJT, 50V, 0.15A, 200mW, SOT-363
Дополнительная информация
The HN1A01FU(T5RSN,F,T) is a dual PNP bipolar junction transistor from Toshiba. It features a maximum collector-base voltage of 50V, a maximum emitter-base voltage of 5V, and a maximum collector-emitter voltage of 50V. The device can handle a maximum DC collector current of 0.15A and a maximum power dissipation of 200mW. It is constructed from silicon material and has a maximum transition frequency of 80MHz. The HN1A01FU(T5RSN,F,T) is suitable for use in surface mount applications and operates over a temperature range of -55°C to 125°C.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| Type | PNP |
| Jedec | SOT-363 |
| EU RoHS | Yes |
| Category | Bipolar Small Signal |
| HTS Code | 8541210095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 6 |
| Automotive | No |
| Schedule B | 8541210080 |
| Package/Case | US |
| AEC Qualified | No |
| Configuration | Dual |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Weight (g) | 0.0068 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Package Length (mm) | 2 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.1(Max) |
| Max Operating Temperature | 125°C |
| Maximum Power Dissipation | 200mW |
| Min Operating Temperature | -55°C |
| Number of Elements per Chip | 2 |
| Maximum DC Collector Current | 0.15A |
| Maximum Emitter Base Voltage | 5V |
| Maximum Transition Frequency | 80(Min)MHz |
| Maximum Collector Base Voltage | 50V |
| Maximum Collector-Emitter Voltage | 50V |
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