HN1B04FU-GR(TE85LF

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HN1B04FU-GR(TE85LF - Toshiba
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Краткое описание: NPN/PNP BJT 50V 0.15A Dual SOT-363 Surface Mount Transistor
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual NPN/PNP bipolar junction transistor for surface mount applications. Features a 6-pin US package (SOT-363) with dimensions of 2mm x 1.25mm x 0.9mm. Offers a maximum collector-emitter voltage of 50V and a maximum DC collector current of 0.15A. Maximum power dissipation is 200mW. Operating temperature range is -55°C to 125°C.
PCB 6
ECCN EAR99
PPAP No
Type NPN|PNP
Jedec SOT-363
EU RoHS Yes
Category Bipolar Small Signal
HTS Code 8541210075
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 6
Automotive No
Schedule B 8541210080
Package/Case US
AEC Qualified No
Configuration Dual
RoHS Versions 2002/95/EC
Package Weight (g) 0.0068
Package Width (mm) 1.25
Package Height (mm) 0.9
Package Length (mm) 2
Minimum DC Current Gain 200@2mA@6V
Seated Plane Height (mm) 1.1(Max)
Max Operating Temperature 125°C
Maximum Power Dissipation 200mW
Min Operating Temperature -55°C
Number of Elements per Chip 2
Maximum DC Collector Current 0.15A
Maximum Emitter Base Voltage 5V
Maximum Transition Frequency 150(Typ)@NPN|120(Typ)@PNPMHz
Maximum Collector Base Voltage 60@NPN|50@PNPV
Maximum Collector-Emitter Voltage 50V

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