HN1C03FU(T5RSONY,F

Производится
HN1C03FU(T5RSONY,F - Toshiba
Увеличить
Краткое описание: NPN BJT Transistor, 20V 0.3A, Dual, SOT-363, 6-Pin, SM
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 20V collector-emitter voltage, 0.3A maximum collector current, and 200mW maximum power dissipation. Housed in a compact 6-pin US package (SOT-363) with a 0.65mm pin pitch, measuring 2mm x 1.25mm x 0.9mm. Operates across a temperature range of -55°C to 150°C.
PCB 6
ECCN EAR99
PPAP No
Type NPN
Jedec SOT-363
EU RoHS Yes
Category Bipolar Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 6
Automotive No
Schedule B 8541210080
Package/Case US
AEC Qualified No
Configuration Dual
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.65
Package Material Plastic
Package Weight (g) 0.0068
Package Width (mm) 1.25
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Seated Plane Height (mm) 0.95
Max Operating Temperature 150°C
Maximum Power Dissipation 200mW
Min Operating Temperature -55°C
Number of Elements per Chip 2
Maximum DC Collector Current 0.3A
Maximum Emitter Base Voltage 25V
Maximum Transition Frequency 30(Typ)MHz
Maximum Collector Base Voltage 50V
Maximum Collector-Emitter Voltage 20V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.