HN4B01JE(TR3SONY,F

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HN4B01JE(TR3SONY,F - Toshiba
Краткое описание: NPN/PNP BJT Dual Common Emitter 50V 0.15A SOT-23 (ESV) 5-Pin SM
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual common emitter NPN/PNP bipolar junction transistor (BJT) for surface mount applications. Features a 5-pin ESV package with flat leads, measuring 1.6mm x 1.2mm x 0.55mm. Supports up to 50V collector-emitter voltage and 0.15A DC collector current, with a minimum DC current gain of 120. Operates across a temperature range of -55°C to 150°C.
PCB 5
ECCN EAR99
PPAP No
Type NPN|PNP
EU RoHS Yes
Category Bipolar Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 5
Automotive No
Lead Shape Flat
Schedule B 8541210080
Package/Case ESV
AEC Qualified No
Configuration Dual Common Emitter
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.5
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.2
Package Family Name SOT
Package Height (mm) 0.55
Package Length (mm) 1.6
Radiation Hardening No
Minimum DC Current Gain 120@2mA@6V
Seated Plane Height (mm) 0.55
Max Operating Temperature 150°C
Maximum Power Dissipation 100mW
Min Operating Temperature -55°C
Number of Elements per Chip 2
Maximum DC Collector Current 0.15A
Maximum Emitter Base Voltage 5V
Maximum Transition Frequency 80(Min)MHz
Maximum Collector Base Voltage 60@NPN|50@PNPV
Maximum Collector-Emitter Voltage 50V

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