HN4C51J(TE85L,F)

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HN4C51J(TE85L,F) - Toshiba
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Краткое описание: NPN BJT 120V 0.1A 300mW 5-Pin SMV SMT
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 120V collector-emitter voltage, 0.1A collector current, and 300mW power dissipation. This dual common base configuration component is housed in a 5-pin SMV (SOT-25) SSOP package with gull-wing leads, measuring 2.9mm x 1.6mm x 1.1mm. Offers a minimum DC current gain of 200 and a typical transition frequency of 100MHz.
PCB 5
ECCN EAR99
PPAP No
Type NPN
Jedec SOT-25
EU RoHS Yes
Category Bipolar Small Signal
HTS Code 8541210075
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 5
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Package/Case SMV
AEC Qualified No
Configuration Dual Common Base
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.014
Package Width (mm) 1.6
Package Description Small Outline Transistor
Package Family Name SSOP
Package Height (mm) 1.1
Package Length (mm) 2.9
Radiation Hardening No
Minimum DC Current Gain 200@2mA@6V
Seated Plane Height (mm) 1.15
Max Operating Temperature 150°C
Maximum Power Dissipation 300mW
Number of Elements per Chip 2
Maximum DC Collector Current 0.1A
Maximum Emitter Base Voltage 5V
Maximum Transition Frequency 100(Typ)MHz
Maximum Collector Base Voltage 120V
Maximum Collector-Emitter Voltage 120V

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