HOA0862-N55
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Краткое описание:
Phototransistor, 30V, 30mA, 100mW, Through Hole, -40 to 85°C
Дополнительная информация
This phototransistor has a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It can handle a power dissipation of 100mW and has a response time of 15us. The device is designed for through-hole mounting and operates within a temperature range of -40 to 85°C.
| RoHS | Not Compliant |
| Mount | Through Hole |
| Fall Time | 15us |
| Packaging | Bulk |
| Response Time | 15us |
| RoHS Compliant | No |
| Forward Current | 50mA |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 3V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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