HOA0871-N55
Производится
Увеличить
Краткое описание:
Phototransistor, 30V, 30mA, 100mW, Through Hole, -40°C to 85°C
Дополнительная информация
The HOA0871-N55 is a phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It has a power dissipation of 100mW and is designed for operation between -40°C and 85°C. The device is mounted through a hole and is suitable for applications requiring a phototransistor output type.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Fall Time | 15000ns |
| Output Type | Phototransistor |
| Response Time | 15us |
| RoHS Compliant | No |
| Forward Current | 50mA |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Collector Current | 30mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 3V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
