HUF75321D3ST
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Краткое описание:
N-Ch MOSFET 55V 20A 36mR TO-252AA UltraFET
Дополнительная информация
N-Channel MOSFET, 55V Drain-Source Breakdown Voltage, 20A Continuous Drain Current, 36mΩ Max Drain-Source On-Resistance. Features 93W Max Power Dissipation, 175°C Max Operating Temperature, and TO-252AA surface mount package. Ideal for power switching applications with fast switching times including 11ns turn-on delay and 66ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | UltraFET™ |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 66ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 36mR |
| Package/Case | TO-252AA |
| Current Rating | 20A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 55V |
| Package Quantity | 1 |
| Input Capacitance | 680pF |
| Power Dissipation | 93W |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 47ns |
| Element Configuration | Single |
| Max Power Dissipation | 93W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 36mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 36mR |
| Drain to Source Breakdown Voltage | 55V |
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