HUF75344G3

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HUF75344G3 - Onsemi
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Краткое описание: N-Ch MOSFET 55V 75A 8mR TO-247 UltraFET Power
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET featuring 55V drain-source breakdown voltage and 75A continuous drain current. This single element MOSFET offers a low 8mΩ drain-source on-resistance and 285W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, it operates from -55°C to 175°C and includes fast switching characteristics with turn-on delay of 13ns and fall time of 57ns. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 4.82mm
Height 20.82mm
Length 15.87mm
Series UltraFET™
Weight 6.39g
Polarity N-CHANNEL
Fall Time 57ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 8mR
Nominal Vgs 4V
Package/Case TO-247
Current Rating 75A
RoHS Compliant Yes
DC Rated Voltage 55V
Package Quantity 30
Input Capacitance 3.2nF
Power Dissipation 285W
Threshold Voltage 4V
Turn-On Delay Time 13ns
Turn-Off Delay Time 46ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 285W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 8mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 75A
Drain to Source Voltage (Vdss) 55V
Drain-source On Resistance-Max 8MR
Drain to Source Breakdown Voltage 55V

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