HUF75345G3

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HUF75345G3 - Onsemi
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Краткое описание: N-Channel MOSFET 55V 75A 7mR TO-247
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET featuring 55V drain-source breakdown voltage and 75A continuous drain current. This single-element MOSFET boasts a low 7mΩ drain-source on-resistance and a maximum power dissipation of 325W. Designed for through-hole mounting in a TO-247 package, it operates from -55°C to 175°C and offers fast switching with a 14ns turn-on delay. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 4.82mm
Height 20.82mm
Length 15.87mm
Series UltraFET™
Weight 6.39g
Polarity N-CHANNEL
Fall Time 26ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 7mR
Package/Case TO-247
Current Rating 75A
RoHS Compliant Yes
DC Rated Voltage 55V
Package Quantity 30
Input Capacitance 4nF
Power Dissipation 325W
Threshold Voltage 4V
Number of Elements 1
Turn-On Delay Time 14ns
Radiation Hardening No
Turn-Off Delay Time 42ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 325W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 7mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 75A
Drain to Source Voltage (Vdss) 55V
Drain-source On Resistance-Max 7mR
Drain to Source Breakdown Voltage 55V

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