HUF75545P3

Производится
HUF75545P3 - Onsemi
Увеличить
Краткое описание: N-Ch MOSFET 80V 75A 10mR TO-220AB
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel UltraFET Power MOSFET featuring 80V drain-source breakdown voltage and 75A continuous drain current. This through-hole component offers a low 10mΩ maximum drain-source on-resistance and 270W maximum power dissipation. Operating from -55°C to 175°C, it boasts fast switching speeds with a 14ns turn-on delay and 90ns fall time. Packaged in TO-220AB, this RoHS compliant device is ideal for high-power applications.
RoHS Compliant
Mount Through Hole
Width 4.7mm
Height 16.3mm
Length 10.67mm
Series UltraFET™
Current 75A
Voltage 80V
Polarity N-CHANNEL
Fall Time 90ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 10mR
Package/Case TO-220AB
Current Rating 75A
RoHS Compliant Yes
DC Rated Voltage 80V
Package Quantity 50
Input Capacitance 3.75nF
Power Dissipation 270W
Threshold Voltage 4V
Turn-On Delay Time 14ns
Turn-Off Delay Time 40ns
Reach SVHC Compliant No
Max Power Dissipation 270W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 10mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 75A
Drain to Source Voltage (Vdss) 80V
Drain-source On Resistance-Max 10mR
Drain to Source Breakdown Voltage 80V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.