HUF75545S3ST
Производится
Увеличить
Краткое описание:
N-Channel MOSFET, 80V, 75A, 10mΩ, TO-263AB, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 80V Vds, 75A continuous drain current, and 10mΩ max Rds(on). Features 270W power dissipation, 175°C max operating temperature, and 8.2mΩ drain-source resistance. Surface mount TO-263AB package, 3.75nF input capacitance, and 4V threshold voltage. RoHS compliant with 14ns turn-on delay and 40ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | UltraFET™ |
| Weight | 1.31247g |
| Polarity | N-CHANNEL |
| Fall Time | 90ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 10mR |
| Package/Case | TO-263AB |
| Current Rating | 75A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Package Quantity | 1 |
| Input Capacitance | 3.75nF |
| Power Dissipation | 270W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 270W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 10mR |
| Drain to Source Breakdown Voltage | 80V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
