HUF75631S3ST
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Краткое описание:
N-Ch MOSFET 100V 33A 40mR TO-263AB Surface Mount
Дополнительная информация
N-Channel UltraFET Power MOSFET featuring 100V drain-source breakdown voltage and 33A continuous drain current. This single-element transistor offers a low 40mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 120W. Designed for surface mounting in a TO-263AB package, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 9.5ns turn-on delay and 40ns turn-off delay, with a 55ns fall time. This RoHS compliant component is supplied on an 800-piece tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4.83mm |
| Height | 11.33mm |
| Length | 10.67mm |
| Series | UltraFET™ |
| Weight | 1.31247g |
| Polarity | N-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 40mR |
| Package/Case | TO-263AB |
| Current Rating | 33A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1 |
| Input Capacitance | 1.22nF |
| Power Dissipation | 120W |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Element Configuration | Single |
| Max Power Dissipation | 120W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 40mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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