HUF75852G3
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Краткое описание:
N-Ch MOSFET 150V 75A 16mR TO-247
Дополнительная информация
N-Channel UltraFET Power MOSFET featuring 150V drain-source breakdown voltage and a maximum continuous drain current of 75A. This through-hole component offers a low drain-source on-resistance of 16mΩ, enabling efficient power handling with a maximum power dissipation of 500W. Operating across a wide temperature range from -55°C to 175°C, it is packaged in a TO-247 for robust thermal performance. The MOSFET exhibits fast switching characteristics with turn-on delay time of 22ns and turn-off delay time of 82ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | UltraFET™ |
| Current | 75A |
| Voltage | 150V |
| Polarity | N-CHANNEL |
| Fall Time | 107ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 16mR |
| Package/Case | TO-247 |
| Current Rating | 74A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 150V |
| Package Quantity | 150 |
| Input Capacitance | 7.69nF |
| Power Dissipation | 500W |
| Number of Elements | 1 |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 82ns |
| Max Power Dissipation | 500W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 16mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 16MR |
| Drain to Source Breakdown Voltage | 150V |
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