HUF76629D3ST
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Краткое описание:
N-Ch MOSFET 100V 20A 52mΩ TO-252AA Logic Level
Дополнительная информация
N-Channel Logic Level UltraFET® Power MOSFET, surface mount, TO-252AA package. Features 100V drain-source breakdown voltage, 20A continuous drain current, and a maximum drain-source on-resistance of 52mΩ. Operates from -55°C to 175°C with 110W maximum power dissipation. Logic level gate drive capability with a 16V gate-to-source voltage. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | UltraFET™ |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 60ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 52mR |
| Package/Case | TO-252AA |
| Current Rating | 20A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 2500 |
| Input Capacitance | 1.285nF |
| Power Dissipation | 110W |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 67ns |
| Element Configuration | Single |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 41.5mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 54mR |
| Drain to Source Breakdown Voltage | 100V |
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