IGW15N120H3

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IGW15N120H3 - Infineon
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Краткое описание: IGW15N120H3 1.2kV 30A 175°C TO-247-3 Insulated Gate Bipolar Transistor
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The IGW15N120H3 is a 1.2kV insulated gate bipolar transistor with a maximum collector current of 30A and a maximum operating temperature of 175°C. It is packaged in a TO-247-3 flange mount package. The device is RoHS compliant and not halogen free. It is designed for use in high-power applications and has a maximum power dissipation of 217W. The transistor is available in a rail or tube packaging configuration.
RoHS Compliant
Series TrenchStop™
Packaging Rail/Tube
Input Type STANDARD
Halogen Free Not Halogen Free
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 240
Reach SVHC Compliant No
Max Collector Current 30A
Max Power Dissipation 217W
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Collector-emitter Voltage-Max 2.4V
Collector Emitter Voltage (VCEO) 1.2kV
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.4V

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