IGW25T120
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Краткое описание:
IGW25T120 TO-247-3 Insulated Gate Bipolar Transistor 1.2kV 50A 190W
Дополнительная информация
The IGW25T120 is a TO-247-3 flange mount transistor with a maximum collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 50A. It has a maximum power dissipation of 190W and operates over a temperature range of -40°C to 150°C. The transistor is lead-free and RoHS compliant, packaged in a rail/tube configuration with 240 units per package. It is a TrenchStop series insulated gate bipolar transistor.
| RoHS | Compliant |
| Width | 5.21mm |
| Height | 21.1mm |
| Length | 16.13mm |
| Series | TrenchStop® |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Input Type | STANDARD |
| Halogen Free | Not Halogen Free |
| Package/Case | TO-247-3 |
| RoHS Compliant | Yes |
| Package Quantity | 240 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Collector Current | 50A |
| Max Power Dissipation | 190W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 2.2V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.2V |
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