IGW40N65H5FKSA1
Производится
Увеличить
Краткое описание:
Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel,
Дополнительная информация
Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel,
| RoHS | Compliant |
| Mount | Through Hole |
| Series | TrenchStop® |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Input Type | STANDARD |
| Halogen Free | Not Halogen Free |
| Package/Case | TO-247 |
| RoHS Compliant | Yes |
| Package Quantity | 240 |
| Power Dissipation | 255W |
| Max Collector Current | 74A |
| Max Power Dissipation | 255W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 2.1V |
| Collector Emitter Voltage (VCEO) | 650V |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.6V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
