IGW50N60H3FKSA1

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IGW50N60H3FKSA1 - Infineon
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Краткое описание: IGT60N60H3FKSA1 600V 100A 333W TO-247-3 IGBT
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The IGT60N60H3FKSA1 is a 600V insulated gate bipolar transistor with a maximum collector current of 100A and maximum power dissipation of 333W. It is packaged in a TO-247-3 flange mount package, with a width of 5.21mm, length of 16.13mm, and height of 21.1mm. The transistor operates within a temperature range of -40°C to 175°C and is compliant with RoHS regulations. It is part of the TrenchStop series from Infineon.
RoHS Compliant
Width 5.21mm
Height 21.1mm
Length 16.13mm
Series TrenchStop®
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Halogen Free Not Halogen Free
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 240
Max Breakdown Voltage 600V
Max Collector Current 100A
Max Power Dissipation 333W
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Collector-emitter Voltage-Max 2.3V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V

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