IKA08N65H5XKSA1
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Краткое описание:
IGBT 650V 10.8A 31.2W TO-220-3
Дополнительная информация
The IKA08N65H5XKSA1 is a 650V insulated gate bipolar transistor with a maximum collector current of 10.8A and a maximum power dissipation of 31.2W. It is packaged in a TO-220-3 case and is designed for through-hole mounting. The device operates over a temperature range of -40°C to 175°C and is compliant with RoHS regulations. The IKA08N65H5XKSA1 is part of the TrenchStop series from Infineon.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.85mm |
| Height | 16.15mm |
| Length | 10.65mm |
| Series | TrenchStop® |
| Weight | 0.211644oz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Input Type | STANDARD |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Max Collector Current | 10.8A |
| Max Power Dissipation | 31.2W |
| Reverse Recovery Time | 40ns |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 2.1V |
| Collector Emitter Voltage (VCEO) | 650V |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.65V |
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