IKA15N60TXKSA1

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IKA15N60TXKSA1 - Infineon
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Краткое описание: 600V N-Ch IGBT, 14.7A, TO-220AB
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and 14.7A Continuous Collector Current. This device offers a low 1.5V Collector Emitter Saturation Voltage and a maximum operating temperature of 175°C. Packaged in a TO-220-3 full pack, it is RoHS compliant and Halogen Free. Key switching characteristics include a 17ns Turn-On Delay Time and 188ns Turn-Off Delay Time.
RoHS Compliant
Height 19.546mm
Series TrenchStop®
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Halogen Free Halogen Free
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 500
Power Dissipation 35.7W
Turn-On Delay Time 17ns
Radiation Hardening No
Turn-Off Delay Time 188ns
Max Breakdown Voltage 600V
Max Collector Current 14.7A
Max Power Dissipation 35.7W
Reverse Recovery Time 34ns
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Continuous Collector Current 18.3A
Collector-emitter Voltage-Max 2.05V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.5V

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