IKB06N60T

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IKB06N60T - Infineon
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Краткое описание: IGBT 600V 12A 88W TO-263-3
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The IKB06N60T is a 600V insulated gate bipolar transistor with a maximum collector current of 12A and a maximum power dissipation of 88W. It is packaged in a TO-263-3 package and is suitable for operating temperatures between -40°C and 175°C. The transistor is RoHS compliant and halogen free. It is available in a tape and reel packaging with 1000 units per package.
RoHS Compliant
Width 9.45mm
Height 4.57mm
Length 10.31mm
Series TrenchStop™
Packaging Tape and Reel
Input Type STANDARD
Halogen Free Halogen Free
Package/Case TO-263-3
RoHS Compliant Yes
Package Quantity 1000
Reach SVHC Compliant No
Max Breakdown Voltage 600V
Max Collector Current 12A
Max Power Dissipation 88W
Reverse Recovery Time 123ns
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Collector-emitter Voltage-Max 2.05V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.05V

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