IKD04N60RFATMA1

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IKD04N60RFATMA1 - Infineon
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Краткое описание: IGBT 600V 8A 75W TO-252-3 Surface Mount
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The IKD04N60RFATMA1 is a 600V insulated gate bipolar transistor with a maximum collector current of 8A and a maximum power dissipation of 75W. It is packaged in a TO-252-3 surface mount package with a height of 2.41mm and a length of 6.73mm. The transistor operates over a temperature range of -40°C to 175°C and is compliant with RoHS standards. It features a reverse recovery time of 34ns and is part of the TrenchStop series from Infineon.
RoHS Compliant
Mount Surface Mount
Width 6.22mm
Height 2.41mm
Length 6.73mm
Series TrenchStop™
Lead Free Contains Lead
Packaging Cut Tape
Input Type STANDARD
Halogen Free Halogen Free
Package/Case TO-252-3
RoHS Compliant Yes
Package Quantity 2500
Max Collector Current 8A
Max Power Dissipation 75W
Reverse Recovery Time 34ns
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V

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