IKD06N60RFATMA1

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IKD06N60RFATMA1 - Infineon
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Краткое описание: 600V 12A TO-252-3 IGBT
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The IKD06N60RFATMA1 is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 12A. It features a TO-252-3 package and is suitable for surface mount applications. The device operates within a temperature range of -40°C to 175°C and has a maximum power dissipation of 100W. It is compliant with RoHS regulations and is halogen-free.
RoHS Compliant
Mount Surface Mount
Width 6.22mm
Height 2.41mm
Length 6.73mm
Series TrenchStop®
Lead Free Contains Lead
Packaging Tape and Reel
Input Type STANDARD
Halogen Free Halogen Free
Package/Case TO-252-3
RoHS Compliant Yes
Package Quantity 1
Power Dissipation 100W
Max Breakdown Voltage 600V
Max Collector Current 12A
Max Power Dissipation 100W
Reverse Recovery Time 48ns
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V

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