IKD10N60RF

Производится
IKD10N60RF - Infineon
Увеличить
Краткое описание: 600V 20A N-CH IGBT DPAK SMT Transistor
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Insulated Gate Bipolar Transistor (IGBT) chip for automotive applications. Features 600V collector-emitter voltage and 20A continuous collector current. Surface-mount DPAK package (TO-252AA) with 3 pins and a tab, offering a maximum power dissipation of 150,000mW. Operating temperature range from -40°C to 175°C.
PCB 2
Tab Tab
ECCN EAR99
Jedec TO-252AA
EU RoHS Yes with Exemption
HTS Code 8541290095
Mounting Surface Mount
Cage Code CG091
Pin Count 3
Automotive Yes
Lead Shape Gull-wing
Schedule B 8541290080
Channel Type N
Package/Case DPAK
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.29
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 6.22(Max)
Package Description Deca Watt Package
Package Family Name TO-252
Package Height (mm) 2.41(Max)
Package Length (mm) 6.73(Max)
Seated Plane Height (mm) 2.56(Max)
Max Operating Temperature 175°C
Maximum Power Dissipation 150000mW
Min Operating Temperature -40°C
Maximum Gate Emitter Voltage ±20V
Maximum Collector-Emitter Voltage 600V
Maximum Continuous Collector Current 20A
Typical Collector Emitter Saturation Voltage 2.2V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.