IKD15N60RATMA1
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Краткое описание:
600V 30A N-Channel IGBT, TO-252 DPAK, Surface Mount
Дополнительная информация
N-channel Insulated Gate Bipolar Transistor (IGBT) for surface mount applications. Features a 600V collector-emitter breakdown voltage and a maximum collector current of 30A. Operates within a temperature range of -40°C to 175°C with a maximum power dissipation of 250W. Packaged in a TO-252-3 (DPAK) plastic package, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchStop™ |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Input Type | STANDARD |
| Halogen Free | Halogen Free |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 250W |
| Element Configuration | Single |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 30A |
| Max Power Dissipation | 250W |
| Reverse Recovery Time | 110ns |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector Emitter Breakdown Voltage | 600V |
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