IKP15N60T
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Краткое описание:
IGBT 600V 30A 130W TO-220-3
Дополнительная информация
The IKP15N60T is an insulated gate bipolar transistor from Infineon with a collector-emitter breakdown voltage of 600V and a maximum collector current of 30A. It features a TO-220-3 package and is lead-free and halogen-free. The transistor has a maximum power dissipation of 130W and operates within a temperature range of -40°C to 175°C. It is RoHS compliant and does not contain any radiation-hardened components.
| RoHS | Compliant |
| Series | TrenchStop® |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Input Type | STANDARD |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Power Dissipation | 130W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Collector Current | 30A |
| Max Power Dissipation | 130W |
| Reverse Recovery Time | 34ns |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 2.05V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.05V |
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